Emerging resistive random-access memory for 'fog' computing and IoT: materials and structural options taxonomy
by V.А. Lapshinsky; L.N. Patrikeev
International Journal of Nanotechnology (IJNT), Vol. 16, No. 6/7/8/9/10, 2019

Abstract: The emergence of resistive random-access memory (ReRAM) die and fog computing plus internet-of-things (IoT) has given rise to the need for developing memristive memory elements structure and material conductance mechanisms taxonomy for ReRAM. In this paper, we review those aspects, including nanoparticles (metallic, bimetallic, etc.), graphene and other carbonbased materials and structures and related 2D materials. The corresponding taxonomies are presented in this paper, which can help to find new materials, optimal values of technological parameters, optimise the structure and maximise the efficiency ReRAM for emerging applications.

Online publication date: Wed, 15-Apr-2020

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