Inderscience Publishers - linking academia, business and industry through research

Article Comments

0.7Ge_0.3 nHTFET and pHTFET for steep subthreshold characteristics">

Contributions from readers on our articles are very welcome. This form will let us retrieve the current data in the database and allows us to consider your comments.

Name

Email address

You are a (optional)

Article Title

Asymmetric gated Ge-Si_0.7Ge_0.3 nHTFET and pHTFET for steep subthreshold characteristics

Authors

Suman Lata Tripathi; Sobhit Saxena

Journal

International Journal of Microstructure and Materials Properties (IJMMP), 2019 Vol.14 No.6, pp.497 - 510

Your comments or corrections

As a security check, please answer this maths question

12 + 10 =

Thank you for your feedback.

Article Comments

Keep up-to-date