Article: Effect of V, In and Cu doping on properties of p-type ZnSe/Si heterojunction solar cell Journal: Progress in Industrial Ecology, An International Journal (PIE) 2019 Vol.13 No.2 pp.173 - 186 Abstract: The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10-5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after doping with preferential orientation (111) and the atomic force microscopy (AFM) were used to examine the surface morphology. Optical studies were done using UV-Visible spectroscopy and the band gap energy was found to decrease with doping. Hall measurements showed that all the films are p-type with high carriers concentration (3.26 × 1017 cm-3) in ZnSe:Cu thin film. The built in potential was determined from the C-V measurements which revealed an abrupt junction for all heterojunction samples. The conversion efficiency calculated from dark and illuminated I-V characteristics of ZnSe/Si solar cell pure and doping. The chances for achieve type of doping can be improved by designing growth conditions that destabilise the formation of compensating centres, which is important for optical device applications, the effect of doping on main different factors such as open-circuit voltage, short-circuit current density, fill factor, the photovoltaic conversion efficiency of ZnSe pure and doped. The results reveal high efficiency for ZnSe:Cu heterojunction solar cell. Inderscience Publishers - linking academia, business and industry through research

Title: Effect of V, In and Cu doping on properties of p-type ZnSe/Si heterojunction solar cell

Authors: Bushra H. Hussein; Iman Hameed Khudayer; Mohammed Hamid Mustafa; Auday H. Shaban

Addresses: Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, 10071, Iraq ' Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, 10071, Iraq ' Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, 10071, Iraq ' Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, 10071, Iraq

Abstract: The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10^-5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after doping with preferential orientation (111) and the atomic force microscopy (AFM) were used to examine the surface morphology. Optical studies were done using UV-Visible spectroscopy and the band gap energy was found to decrease with doping. Hall measurements showed that all the films are p-type with high carriers concentration (3.26 × 1017 cm^-3) in ZnSe:Cu thin film. The built in potential was determined from the C-V measurements which revealed an abrupt junction for all heterojunction samples. The conversion efficiency calculated from dark and illuminated I-V characteristics of ZnSe/Si solar cell pure and doping. The chances for achieve type of doping can be improved by designing growth conditions that destabilise the formation of compensating centres, which is important for optical device applications, the effect of doping on main different factors such as open-circuit voltage, short-circuit current density, fill factor, the photovoltaic conversion efficiency of ZnSe pure and doped. The results reveal high efficiency for ZnSe:Cu heterojunction solar cell.

Keywords: ZnSe:Cu heterojunction; photovoltaic; AFM; atomic force microscopy; conversion efficiency.

DOI: 10.1504/PIE.2019.099358

Progress in Industrial Ecology, An International Journal, 2019 Vol.13 No.2, pp.173 - 186

Received: 22 Feb 2018
Accepted: 19 Nov 2018
Published online: 29 Apr 2019 *

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Title: Effect of V, In and Cu doping on properties of p-type ZnSe/Si heterojunction solar cell

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