Title: Synthesis of spin-coated nanostructured ZnO on P-type silicon and temperature dependence of I-V characteristic

Authors: Kevin Alvin Eswar; Fadzilah Shuaimi Mohd. Husairi; Siti Aminah Mohammad; Aziz Azlinda; M. Rusop; S. Abdullah

Addresses: Universiti Teknologi Mara (UiTM), Cawangan Sabah, Locked Beg 71, 88997 Kota Kinabalu, Sabah, Malaysia; Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia; NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia ' Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia; NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia ' Universiti Teknologi Mara (UiTM), Cawangan Sabah, Locked Beg 71, 88997 Kota Kinabalu, Sabah, Malaysia; Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia ' Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia; NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia ' NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia; Faculty of Electrical Engineering, NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia ' Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia; NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia

Abstract: Sol-gel spin coating deposition method was used to deposits nanostructured ZnO on P-type silicon. Zinc acetate, diethanolamine, and isopropyl were used as starting material, stabiliser and solvent respectively. Surface morphology was studied by field emission scanning electron microscopy (FESEM). It was found that nanostructured ZnO was distributed uniformly over the P-type Silicon substrate. This was supported by atomic force microscopy (AFM) image which shows the all the surfaces are covered by nanoparticle of ZnO. X-ray diffraction (XRD) was employed to analyse the structural and crystalline of nanostructured ZnO. Three peak (100), (002) and (101) correspond to nanostructed ZnO are appear. Temperature dependence I-V characteristic was investigated in range of 25 K to 300 K by using close cycle cryostat and using helium as cooler agent. It is found that the resistance were decrease toward the higher temperature. The result shows that resistivity gradually decreased due to increases of temperature.

Keywords: ZnO nanostructures; zinc oxide; zinc acetate; diethanolamine; isopropyl; I-V characteristic; P-type silicon; semiconductor materials; temperature dependence I-V; sol-gel spin coating; nanotechnology; coating deposition; helium; nanoparticles.

DOI: 10.1504/IJMATEI.2015.072844

International Journal of Materials Engineering Innovation, 2015 Vol.6 No.4, pp.215 - 224

Available online: 04 Nov 2015 *

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