Title: Comparison of dielectric property of lithium tantalate infrared detector prepared by sol-gel and IBED methods

Authors: De-Yin Zhang; Kun Li; Wei-Dong Peng; Jian-Sheng Xie; Wei Qian

Addresses: Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan, Sichuan Province 618307, China. ' School of Materials Science and Engineering, Changzhou University, Changzhou University Town, Changzhou, Jiangsu 213164, China. ' Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan, Sichuan Province 618307, China. ' School of Mathematics and Physics, Changzhou University, Changzhou University Town, Changzhou, Jiangsu 213164, China. ' Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan, Sichuan Province 618307, China

Abstract: The novel uncooled lithium tantalate thin film infrared detector samples were prepared by Sol-Gel and IBED methods. The crystallisation, micrograph, dielectric property and current leakage of detector samples were investigated by XRD, SEM, impedance analyser and ferroelectric material analyser. The experimental results reveal both IBED and Sol-Gel lithium tantalate thin films have perfect cross-sectional micrograph. The Sol-Gel method is easy to control lithium tantalate stoichiometric proportion in the prepared films. The IBED method obtains perfect thin films only if the right ratio targets were used. The IBED samples annealed at 550°C have dielectric permittivity of 39.44 and dielectric loss of 0.045 at 100 kHz, the current leakage of 4.76 × 10−8A/cm² at tested field of 400 kV/cm, and breakdown field up to 680 kV/cm. But the dielectric loss and current leakage of Sol-Gel samples are larger than those of the IBED samples. It means the IBED process is better to prepare the novel detectors.

Keywords: ion beam enhanced deposition; IBED; dielectric properties; lithium tantalite; current leakage; sol-gel; infrared detectors; thin films.

DOI: 10.1504/IJMA.2012.050494

International Journal of Mechatronics and Automation, 2012 Vol.2 No.4, pp.295 - 302

Available online: 26 Nov 2012 *

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