Suppression of surface leakage current in InSb photodiode by ZnS passivation Online publication date: Mon, 20-Jun-2016
by Sehun Park; Daehan Choi; Hwanyeol Park; Daeyoung Moon; Euijoon Yoon; Yongjo Park; Duk Kyu Bae
International Journal of Nanotechnology (IJNT), Vol. 13, No. 4/5/6, 2016
Abstract: We have investigated the suppression of surface leakage current in InSb photodiodes using ZnS passivation. Capacitance-voltage characteristics for metal-insulator-semiconductor (MIS) devices showed that positive fixed charges were introduced in the ZnS film and they compensated the negative fixed charges in InSb. AES and PL analysis revealed that the ZnS films were S-deficient and the positive fixed charges were originated from the sulphur vacancy. An InSb pn photodiode structures passivated with ZnS film deposited at 1.5 Å/s showed the lowest surface leakage current, which is consistent with the result that it was close to the ideal flat-band condition. This indicates that deposition of S-deficient ZnS film is an effective way to suppress the dark current in InSb photodiode.
Online publication date: Mon, 20-Jun-2016
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