Suppression of surface leakage current in InSb photodiode by ZnS passivation
by Sehun Park; Daehan Choi; Hwanyeol Park; Daeyoung Moon; Euijoon Yoon; Yongjo Park; Duk Kyu Bae
International Journal of Nanotechnology (IJNT), Vol. 13, No. 4/5/6, 2016

Abstract: We have investigated the suppression of surface leakage current in InSb photodiodes using ZnS passivation. Capacitance-voltage characteristics for metal-insulator-semiconductor (MIS) devices showed that positive fixed charges were introduced in the ZnS film and they compensated the negative fixed charges in InSb. AES and PL analysis revealed that the ZnS films were S-deficient and the positive fixed charges were originated from the sulphur vacancy. An InSb pn photodiode structures passivated with ZnS film deposited at 1.5 Å/s showed the lowest surface leakage current, which is consistent with the result that it was close to the ideal flat-band condition. This indicates that deposition of S-deficient ZnS film is an effective way to suppress the dark current in InSb photodiode.

Online publication date: Mon, 20-Jun-2016

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email