Characteristics of nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory Online publication date: Thu, 13-Mar-2014
by Jer-Chyi Wang; Yu-Ren Ye; Ying-Huei Wu; Chi-Fong Ai; Wen-Fa Tsai
International Journal of Nanotechnology (IJNT), Vol. 11, No. 1/2/3/4, 2014
Abstract: The effect of nitrogen plasma immersion ion implantation (PIII) treatment on the thin films of gadolinium oxide (GdxOy) for use in resistive random access memory (RRAM) applications is reported. From the X-ray photoelectron spectroscopic analysis, the formation of Gd-N bond was evidenced by a shift in the peak Gd 4d peaks towards lower binding energy. It was observed that the nitrogen PIII treatment enhanced the product yield of the GdxOy RRAM up to 77%. With the nitrogen PIII treatment, the switching mechanism of the GdxOy RRAMs changed from Schottky emission to space-charge-limited-current conduction, as determined by the current-voltage fitting and device-area-dependent measurements. The nitrogen PIII-treated GdxOy RRAMs prepared in this study could provide a high resistance ratio of 104, suitable for future application as non-volatile memory.
Online publication date: Thu, 13-Mar-2014
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email firstname.lastname@example.org