Analysis of electrode thickness variation on performance parameters of polymer thin film transistors using device simulation Online publication date: Wed, 30-Jul-2014
by Brijesh Kumar; Brajesh Kumar Kaushik; Yuvraj Singh Negi
International Journal of Advanced Intelligence Paradigms (IJAIP), Vol. 5, No. 1/2, 2013
Abstract: This paper provides a detailed analysis of top and bottom gate polymer thin film transistor (PTFT) structures for different positions of the source and drain contacts through 2D device simulation. The performances of all the structures are compared in terms of electrical parameters keeping structural dimensions and material properties constant. Further analysis extends to bottom gate devices with an infinitesimal contact thickness to 25 nm. The results reveal higher drain current for top contact and changes minutely with the contact thickness, however up to three times increment is observed for bottom contact, but comparatively the current magnitude is still lower than the top contact device. Further higher on-off current ratio, transconductance and mobility is extracted for top contact and an average variation of 0.002 cm²/V.s in mobility is noticed for every 5 nm change in thickness, whereas, linear increment is observed while contacts are at bottom.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Advanced Intelligence Paradigms (IJAIP):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook