Fabrication and growth of GaN-based micro and nanostructures
by Blandine Alloing; Emmanuel Beraudo; Yvon Cordier; Fabrice Semond; Sylvain Sergent; Olivier Tottereau; P. Vennéguès; Stéphane Vézian; Jesús Zúñiga-Pérez
International Journal of Nanotechnology (IJNT), Vol. 9, No. 3/4/5/6/7, 2012

Abstract: GaN is considered as the material of choice for electromechanical, electronic and optoelectronic applications in the visible/UV regions of the electromagnetic spectrum. However, the lack of an adapted substrate results in a very large density of defects, in particular dislocations, stacking faults and cracks. Under these circumstances, the growth of nanostructures appears as an appealing means of circumventing the problem. In this paper, we describe the fabrication and characterisation of GaN-based nanostructures – cantilevers, microdiscs, photonic crystals, micro and nanowires – grown by metallorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) and fabricated either by a bottom-up or a top-down approach. The applications envisaged at CRHEA will be examined.

Online publication date: Mon, 06-Feb-2012

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com