High tunable Ba0.5Sr0.5TiO3 thin film deposited on silicon substrate with MgO buffer layer
by Jie Hou; Congchun Zhang; Chunsheng Yang; Guifu Ding
International Journal of Nanomanufacturing (IJNM), Vol. 7, No. 5/6, 2011

Abstract: High tunable Ba0.5Sr0.5TiO3 thin films were deposited by r.f. magnetron sputtering on Si substrate. MgO, as a buffer layer, was deposited by r.f. magnetron sputtering. An interdigital varactor was fabricated by micro-fabrication process and the dielectric properties were investigated. The results show that the crystallisation of Ba0.5Sr0.5TiO3 was improved by the insertion of MgO buffer layer after the post annealing process. The MgO buffer layer enhances the oriental growth of BST along (100). Also, the tunability of the Ba0.5Sr0.5TiO3 thin films was improved and the dielectric loss greatly decreased.

Online publication date: Sat, 07-Mar-2015

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