A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs
by Shankaranand Jha; Santosh Kumar Choudhary
International Journal of Nanoparticles (IJNP), Vol. 12, No. 1/2, 2020

Abstract: The electrical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) deteriorate with the scaling of device dimensions. To further the miniaturisation and to have more control over the channel, one of the promising solutions is the multi-gate (MG) architecture of MOSFET. In the present work we have investigated various MG devices like double-gate (DG), tri-gate (TG) and gate-all-around (GAA) MOSFETs by varying their physical parameters and have compared the associated short-channel effects (SCEs). For a specific SCE, a common mathematical expression has been used for all the MOSFET architectures. The analytical results have been found to be in reasonable agreement with the simulated/fabricated devices.

Online publication date: Tue, 24-Mar-2020

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