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3N₄-based RRAM with metal-insulator-silicon structure">

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Article Title

Investigation of bipolar resistive switching characteristics in Si₃N₄-based RRAM with metal-insulator-silicon structure

Authors

Sungjun Kim; Sunghun Jung; Byung-Gook Park

Journal

International Journal of Nanotechnology (IJNT), 2014 Vol.11 No.1/2/3/4, pp.126 - 134

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