Title: Calculating current density and quantum efficiency of p-n junction solar cell with quasi-Fermi level approximation

Authors: Arpan Deyasi; Angsuman Sarkar

Addresses: Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Canal South Road, Beliaghata, Kolkata, 700015, India ' Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia, 741235, India

Abstract: Current density and quantum efficiency of p-n junction GaAs solar cell is analytically investigated incorporating the effect of excess carriers due to photon incidence. Carrier transport equations for both types of carriers are solved involving both the conduction mechanisms along with generation rate. Change of dark current is reported in presence of varying operating conditions, and modulation of quantum efficiency is obtained by varying structural parameters. Results are useful for accurate estimation of figure of merit, which will play key role in photovoltaic applications.

Keywords: current density; quantum efficiency; quasi-Fermi level; doping concentration; temperature; photon flux.

DOI: 10.1504/IJNP.2019.097923

International Journal of Nanoparticles, 2019 Vol.11 No.1, pp.27 - 36

Received: 01 Dec 2017
Accepted: 17 Sep 2018
Published online: 22 Feb 2019 *

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