Title: Electroluminescence properties of InGaN/GaN multiple quantum well light emitting diodes

Authors: Yassine Sayad; Abdel Kader Nouiri

Addresses: Département de Sciences de la Matière, Institut des Sciences et Technologies, Centre Universitaire Mohamed Chérif Messaâdia, Souk Ahras, 41000, Algeria ' Département de Sciences de la Matière, Faculté des Sciences, Université Oum El-Bouaghi, Oum El-Bouaghi, 04000, Algeria

Abstract: Light emitting diodes (LED) and laser diodes (LD) based on III-Nitrides emitting in visible spectrum have seen an interesting advance these last few years. Here, we present a simulation study of a multi quantum well MQW InGaN/GaN light emitting diode LED, where the diode active region is formed by a series of several periods of InGaN quantum wells (QWs) and GaN quantum barriers (QBs). We will, first, present free carriers distribution within LED active region and device electroluminescence under forward polarisation. We will, secondly, see indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on LED optical properties.

Keywords: light emitting diodes; LED; InGaN/GaN MQWs; indium gallium nitride; multiple quantum wells; electroluminescence; optical properties.

DOI: 10.1504/IJNP.2013.054995

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.201 - 207

Published online: 21 Jun 2013 *

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