Authors: H.Y. Zheng, X.C. Wang, W. Zhou
Addresses: Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore. ' Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore. ' Precision Engineering and Nanotechnology Centre, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798, Singapore.
Abstract: Some current research in femtosecond (fs) laser induced surface nano/micro structures on compound semiconductors is discussed in this paper. Both wavelength and sub-wavelength periodic surface structures were observed on InP and GaN/sapphire surfaces irradiated with fs laser pulses. It was found that the morphology of the periodic structure was dependent on the polarisation of the laser beam and the number of laser pulses, and the period was dependent on the incident laser fluence. Through finely adjusting laser fluence and pulse number, uniform ripples can be achieved. The mechanisms involved in the formation laser induced surface structures are also discussed.
Keywords: femtosecond laser; surface morphology; surface ripples; InP; indium phosphide; gallium nitride; sapphire; laser fluence; nanostructures; microstructures; compound semiconductors; laser pulses.
International Journal of Surface Science and Engineering, 2009 Vol.3 No.1/2, pp.114 - 124
Available online: 01 Apr 2009 *Full-text access for editors Access for subscribers Purchase this article Comment on this article