International Journal of Nanotechnology (IJNT) Inderscience Publishers - linking academia, business and industry through research

International Journal of Nanotechnology (IJNT)

International Journal of Nanotechnology

2006 Vol.3 No.1

Special Issue on Progress in Nanomaterials in Ukraine

Guest Editor: Dr. Vladimir Pokropivny

Pages	Title and author(s)
6-7	Eighteenth international conference 'Advanced technology in powder metallurgy and ceramics', 8–12 September 2003 at Kiev, Ukraine. Section 'Nanostructured materials' Valery Skorokhod, Leonid Chernyshev DOI: 10.1504/IJNT.2006.008734
8-28	State-of-the-art and prospects of nanomaterials, nanotechnologies and nanodevices development in Belarus P.A. Vitiaz, V.G. Gorobtsov, V.A. Labunov DOI: 10.1504/IJNT.2006.008717
29-38	The mechanisms of particle formation in Y-doped ZrO₂ T.E. Konstantinova, A.V. Ragulya, A.S. Doroshkevich, G.K. Volkova, V.A. Glazunova DOI: 10.1504/IJNT.2006.008718
39-46	Hierarchy of sizes and sorption selectivity of ultrafine particles of hydrated titania G.P. Shveikin, E.V. Polyakov, T.A. Denisova, I.G. Grigorov, A.P. Shtin DOI: 10.1504/IJNT.2006.008736
47-56	Nanoparticle formation in the synthesis of nanostructured fibres and powders of refractory oxides T.M. Ulyanova, N.P. Krut'ko DOI: 10.1504/IJNT.2006.008719
57-62	Magnetic properties of nanoporous Si powder A.V. Brodovoi, S.G. Bunchuk, V.V. Pokropivny, V.V. Skorokhod DOI: 10.1504/IJNT.2006.008720
63-64	The Fourth International Ukrainian–Russian Seminar 'Nanophysics and Nanoelectronics', September 15–18, 2003, Kiev Anton Naumovets, Lyudmyla Karachevtseva DOI: 10.1504/IJNT.2006.008735
65-75	'Charge pump' effect and mechanisms of charge carriers localisation in oxidised nano-Si V. Blonskyy, V.M. Kadan, A.K. Kadashchuk, A.Y. Vakhnin, A.Y. Zhugayevych DOI: 10.1504/IJNT.2006.008721
76-88	Surface polaritons in 2D macroporous silicon structures Lyudmyla Karachevtseva, Mikola Karas', Volodimir Onishchenko, Fedir Sizov DOI: 10.1504/IJNT.2006.008722
89-105	Electron field emission from porous silicon prepared at low anodisation currents A.A. Evtukh, V.G. Litovchenko, N.I. Klyui, M.O. Semenenko, E.B. Kaganovich, E.G. Manoilov DOI: 10.1504/IJNT.2006.008723
106-119	Formation of photoluminescent properties inherent to silicon quantum dots E.B. Kaganovich, S.V. Svechnikov, E.G. Manoilov, I.M. Kizyаk DOI: 10.1504/IJNT.2006.008724
120-130	Growth of Hg_1-xCd_xTe nanostructures by molecular beam epitaxy with ellipsometric control N.N. Mikhailov, R.N. Smirnov, S.A. Dvoretsky, Yu.G. Sidorov, V.A. Shvets, E.V. Spesivtsev, S.V. Rykhlitski DOI: 10.1504/IJNT.2006.008725
131-139	Nanoindentation features in HgCdTe heterostructures F. Sizov, A. Richter, Ye. Bilevych, Z. Tsybrii, K. Kubica, R. Ries, Yu. Sidorov DOI: 10.1504/IJNT.2006.008726
140-147	Influence of the parameters of material onto surface spin wave refraction in two-axis ferromagnetic media Y.I. Gorobets, S.A. Reshetnyak DOI: 10.1504/IJNT.2006.008727