Nanoscale T-shaped AlGaN/GaN HEMT with improved DC and RF performance
by Meryleen Mohapatra; Tanmoy De; A.K. Panda
International Journal of Nanoparticles (IJNP), Vol. 11, No. 2, 2019

Abstract: AlGaN/GaN-based HEMT with different gate structure are designed i.e., 150 nm rectangular shaped HEMT and 90 nm T-shaped HEMT. It is shown that the DC parameters like drain current, transconductance are improved for T-shaped HEMT as compared to normal gate HEMT. The maximum cut-off frequency for normal gate HEMT is 24 GHz at drain voltage of 20 V and gate voltage of 2 V whereas it is 47 GHz for the T-shaped HEMT. Maximum frequency of oscillation for normal gate HEMT is 95 GHz and for T-shaped HEMT, it is 115 GHz. At the frequency of 5 GHz, the minimum noise figure of the normal gate HEMT is 0.13 dB and for T-shaped HEMT, it is 0.05 dB. Intrinsic time delay of normal gate HEMT is 22 ps whereas the intrinsic time delay for T-gate HEMT is 12 ps. These results prove that the T-shaped HEMT is more preferable for high frequency operations like radar communication, satellite communication, wireless communication, etc.

Online publication date: Fri, 19-Apr-2019

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com