Study of gamma/X-ray interaction in some diodes and transistors Online publication date: Sun, 25-Mar-2018
by H.C. Manjunatha; L. Seenappa; K.N.. Sridhar; Chikka Hanumantharayappa
International Journal of Nuclear Energy Science and Technology (IJNEST), Vol. 11, No. 4, 2017
Abstract: We have studied the gamma radiation effects by computing the parameters such as mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half value layer (HVL), tenth value layer (TVL) and electric conductivity for different types of diodes and transistors, such as small outline transistor. Among the all studied diodes, the diode DO-41 is less sensitive and the diode SOT-323 single diode is more sensitive to gamma radiation compared to other studied diodes. Among the all studied transistors, the transistor TO-220 is less sensitive and the transistor SOT-323 is more sensitive to gamma radiation compared to other studied transistors. The conductivities of transistor and diodes are not constant when they are exposed to high gamma dose. The conductivity varies with the energy of gamma radiation. This work is useful in the selection of electronic equipment in the fields of aerospace, nuclear reactor and weapons communities and particle accelerators.
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