Growth of Hg_1-xCd_xTe nanostructures by molecular beam epitaxy with ellipsometric control
by N.N. Mikhailov, R.N. Smirnov, S.A. Dvoretsky, Yu.G. Sidorov, V.A. Shvets, E.V. Spesivtsev, S.V. Rykhlitski
International Journal of Nanotechnology (IJNT), Vol. 3, No. 1, 2006

Abstract: We demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg_1-xCd_xTe by molecular beam epitaxy. In situ single wavelength ellipsometry is used for control of thickness and variation of Hg_1-xCd_xTe composition. The behavior of ellipsometric parameters measured during the growth of potential barriers, wells and periodic structures are in good agreement with the numerical calculated of variation of ellipsometric parameters ψ and Δ. The thickness and composition of Hg_1-xCd_xTe nanolayers were determined from comparison of experimental and calculated ψ and Δ. The accuracy of nanolayer thickness determination reaches the value of 0.1 nm and composition ±0.002 mole fraction.

Online publication date: Wed, 18-Jan-2006

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