Composition and luminescence of Si and SiO₂ layers co-implanted with Ga and N ions
by D.S. Korolev; A.N. Mikhaylov; A.I. Belov; A.A. Konakov; V.K. Vasiliev; D.E. Nikolitchev; S.I. Surodin; D.I. Tetelbaum; Mahesh Kumar
International Journal of Nanotechnology (IJNT), Vol. 14, No. 7/8, 2017

Abstract: With the aim to establish the possibility of synthesis of GaN inclusions by co-implantation of Ga and N ions in silicon and SiO₂ films on a silicon substrate, the chemical composition and photoluminescence of implanted layers have been investigated. It is observed that the heavy loss of implanted atoms occurs owing to the out-diffusion (Ga from Si, and Ga and N from SiO₂) in the process of post-implantation annealing. Preliminary implantation of nitrogen to form silicon nitride or oxynitride layers is shown to reduce the degree of impurity losses. In the photoluminescence spectrum of both Si and SiO₂ subjected to Ga and N co-implantation, the band at 530-550 nm is present, which can be related to 'defect' luminescence of GaN.

Online publication date: Thu, 30-Mar-2017

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