A novel low power 8T SRAM cell design using lower and upper self controllable voltage level techniques in 45 nm technology
by Prashant Upadhyay; Rajib Kar; Durbadal Mandal; Sakti Prasad Ghoshal
International Journal of Computer Aided Engineering and Technology (IJCAET), Vol. 8, No. 4, 2016

Abstract: This paper proposes a novel low power 8T SRAM cell for write operation. In the proposed structure, two voltage sources VS1 and VS2 are connected with the bit line and the bit bar line, respectively. These voltage sources reduce the swing voltage and reduction in swing voltage causes the reduction in dynamic power dissipation of the proposed SRAM cell. Also, two different leakage power reduction techniques called upper self controllable voltage level (USVL) and lower self controllable voltage level (LSVL) have been proposed and applied individually and in combination with the proposed 8T SRAM for the reduction of leakage current. Both the leakage current and power dissipation results are compared with those of conventional 6T and 7T SRAM cells reported in different literatures. Static noise margin is also analysed during write operation for stability purpose. The proposed SRAM cell has lesser leakage current in comparison to conventional 6T SRAM cell and also dissipates the least amount of power and yields better stability in comparison to both 6T and 7T SRAM cells. The authors use 45 nm CMOS technology with 0.5 volt power supply for simulation purpose. Microwind 3.1 software is used for schematic design and simulation.

Online publication date: Wed, 28-Sep-2016

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Computer Aided Engineering and Technology (IJCAET):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com