Ferroelectric characteristics of ZnO/MgO-based organic capacitor Online publication date: Sun, 04-Oct-2015
by Habibah Zulkefle; Mohamad Hafiz Mohd Wahid; Lyly Nyl Ismail; Raudah Abu Bakar; Rozana Mohd Dahan; Mohamad Rusop Mahmood
International Journal of Materials Engineering Innovation (IJMATEI), Vol. 6, No. 2/3, 2015
Abstract: Magnesium oxide, MgO with nanometre dimension particles size (36 to 73 nm) was successfully deposited on cleaned glass substrate. The drying temperatures were varied from 100 to 300°C and the dielectrics behaviour was investigated. From the results, it was revealed that variation of nano-MgO films properties obtained by changing the drying temperature. Nano-MgO film dried at 200°C was found to be a good dielectric layer due to it structural properties that resulted in the enhancement of relative permittivity value. The electrical properties shows better in dielectric layer characteristic where the resistivity was found to be 12.8 × 104 Ω.cm with leakage current density of 10−9 A.cm−2. The ZnO/MgO-based organic capacitor was fabricated and the remnant polarisation obtained was in range of 59 to 69 mC/m2 with capacitance value of 40 pF.
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