Optical and electrical properties of FeSi₂ films prepared by DC magnetron co-sputtering
by D-P. Zhang; M-D. Zhu; Y. Li; Q-Y. Lin; X-M. Cai; F. Ye; G-X. Liang; Z-H. Zheng; J-T. Luo; P. Fan
International Journal of Nanotechnology (IJNT), Vol. 12, No. 10/11/12, 2015

Abstract: FeSi₂ films were deposited by DC magnetic co-sputtering technique with different Si target sputtering powers. The microstructure, photoluminescence, sheet resistance and Seebeck coefficient of the prepared samples were characterised with X-ray diffraction, fluorospectrometer, four-probe technique and thermoelectric testing instrument, respectively. The XRD results demonstrated that the main contents of the film were Si, ε-FeSi₂, β-FeSi₂ and mixed phase of FeSi. With increase in Si target sputtering power, FeSi₂ phase changed from β-FeSi₂ (422) to β-FeSi₂ (111) and PL intensity was enhanced. Sheet resistance, which is related to the thermoelectric properties of the samples, increased initially and then decreased as the Si target sputtering power increased, and a decrease of the Seebeck coefficient was also observed.

Online publication date: Fri, 18-Sep-2015

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