Delay analysis of ultra high speed InAlAs/InGaAs high electron mobility transistor
by Meryleen Mohapatra; Nutan Shukla; A.K. Panda
International Journal of Nano and Biomaterials (IJNBM), Vol. 5, No. 4, 2014

Abstract: This work deals with the DC, RF and delay analysis of a InAlAs/InGaAs based high electron mobility transistor with different gate lengths viz. 50 nm, 35 nm and 15 nm. A maximum drain current (Idss) of 398 mA/mm is achieved at Vds of 0.4 V for a 15 nm gate length device which is more as compared to 50 nm and 35 nm gate length HEMT with a current of 368 mA/mm, 384 mA/mm respectively. A cutoff frequency (fT) of 1.3 THz is obtained for a 15 nm gate length HEMT while a cutoff frequency of 625 GHz and 1.05 THz has been achieved for a 50 nm and 35 nm gate length devices. A maximum oscillation frequency (fmax) of 1.8 THz has been reported for a 15 nm gate length device where as a fmax of 1.35 THz and 1.58 THz has been obtained for a 50 nm and 35 nm gate length HEMT. For a 50 nm, 35 nm and 15 nm gate length HEMT the transit time obtained is 0.42 psec, 0.3 psec, 0.22 psec respectively.

Online publication date: Fri, 12-Jun-2015

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