Trends in pixel fixed pattern noise characteristics with transfer gate geometry
by Woonil Choi; SungKyu Kwon; Hi-Deok Lee
International Journal of Nanotechnology (IJNT), Vol. 12, No. 3/4, 2015

Abstract: This paper investigated pixel characteristics with a split of transfer gate structure in CMOS image sensor. It is shown that the transfer gate (TG) should be as wide as possible for the given pixel structure for lag-free pixel operation. This investigation uncovered relationships between transfer gate geometry and pixel performance that could provide guidance when designing pixel structure. In particular, it shows how sensitive pixel fixed pattern noise is to the transfer gate width. Experimental results indicate that pixel fixed pattern noise can be reduced to be less than 1%.

Online publication date: Sat, 31-Jan-2015

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