Electrical characterisation of Schottky diodes based on SiC with different contact surfaces
by Nadia Benseddik; Halima Mazari; Mohammed Mostefaoui; Kheira Ameur; Zineb Benamara; Reski Khelifi; Nawal Benyahya; Jean-Marie Bluet
International Journal of Materials Engineering Innovation (IJMATEI), Vol. 5, No. 4, 2014

Abstract: We present in this article current-voltage I(V) and capacitance-voltage C(V) characteristics of Schottky diodes based on SiC. These diodes have different surfaces of Schottky contact. The effect of the surface on the behaviour of the diode is studied. Different current transport mechanisms are revealed from measurements. In addition to thermionic current, other currents are added like the recombination current, tunnelling current and leakage current. Different parameters are extracted from I(V) and C(V) characteristics, such as ideality factor, barrier height, series resistance, doping and the density of interface states.

Online publication date: Thu, 26-Feb-2015

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials Engineering Innovation (IJMATEI):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com