Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
by Deng Xie; Zhi Ren Qiu; Devki N. Talwar; Yi Liu; Jen-Hao Song; Jow-Lay Huang; Ting Mei; Chee Wee Liu; Zhe Chuan Fang
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015

Abstract: Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.

Online publication date: Thu, 04-Dec-2014

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