A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique
by Min-Cheng Chen; Chih-Ming Wu; Yun-Fang Hou; Yi-Ju Chen; Chang-Hsien Lin; Chia-Yi Lin; Bo-Wei Wu; Wen-Kuan Yeh
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015

Abstract: In this study, we used maskless and photoresist-free nano injection lithography (NIL) to develop a sub-10 nm fin width for a Si-based fin field-effect transistor (FinFET) with a 50-nm fin pitch. The active layer was fabricated using double alignment technology (electron-beam lithography and NIL), and the fin trench was filled perfectly by using a high-density plasma chemical vapour deposition process. Advanced plasma and wet etching processes were employed to obtain the fin height. The fabricated FinFET could provide a pathfinding solution for the continuous scaling of complementary metal oxide semiconductor technology.

Online publication date: Thu, 04-Dec-2014

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