Fabrication of finlike thin-film transistors by solution-processed zinc oxide and nanoimprint lithography
by H.J.H. Chen; S.T. Liu; S.Z. Chen
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015

Abstract: This study addresses on the characteristics of transparent thin-film transistors, TTFTs, with finlike channels fabricated by the solution-processed ZnO and UV nanoimprint lithography. The proposed TTFTs exhibited better output drain current, ON/OFF current ratio, sub-threshold swing and field-effect mobility than that with the single channel one. The device performances with respect to line width/space (l/s) ratio of finlike channels were also studied. With this approach, the low cost and high performance TTFTs can be fabricated for future flat-panel display applications.

Online publication date: Thu, 04-Dec-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com