Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion Online publication date: Thu, 04-Dec-2014
by Yu-Ching Liao; Jenn-Gwo Hwu
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015
Abstract: Ultra-thin oxide MOS (p) and MOS (n) capacitors were used in this study to discuss their intrinsic I-V and C-V characteristics under deep depletion. Through deep depletion analysis proposed by Cheng and Hwu [1], we found that the gate leakage current of MOS (p) was perimeter-dependent while MOS (n) was area-dependent. These suggest a strong indication of Schottky barrier height lowering for holes in MOS (p) owing to larger voltage drop on oxide at edge region as the result of fringing field effect [2]. Furthermore, MOS (p) and MOS (n) were put under illumination to investigate the non-uniform movement of minority carriers. As expected, minority carriers of MOS (n) have shorter response time because of comprehensive tunnelling current comparing to MOS (p). A thorough understanding of MOS (p) and MOS (n) under deep depletion was presented. In addition, deep depletion as a tool to investigate the oxide quality was demonstrated.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook