The IGZO fully transparent oxide thin film transistor on glass substrate
by Cheng-I Lin; Yean-Kuen Fang; Wei-Chao Chang
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015

Abstract: The IGZO enhancement mode bottom gate fully transparent thin film transistors prepared on glass substrate were studied. With a-IGZO and GZO, respectively, as active layer, source/drain and gate electrode, we achieved a very high and uniform transparence of 84% in visible range (550-880 nm). Besides, all of the layers can be prepared by RF magnetron sputtering at room temperature.

Online publication date: Thu, 04-Dec-2014

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