Modelling and characterisation of flat-band roll-off behaviours in LaO_x capped high-K/metal-gate NMOSFET with 28 nm CMOS technology
by Wen-Han Hung; Feng-Renn Juang; Yean-Kuen Fang; Tzyy-Ming Cheng
International Journal of Nanotechnology (IJNT), Vol. 11, No. 12, 2014

Abstract: In this paper, we model and characterise the lanthanum oxide (LaO_x) capping layer induced flat-band voltage (V_FB) roll-off behaviours in a high-K/metal-gate n-MOSFET prepared with a foundry's state of the art 28 nm CMOS technology. As the interface layer EOT down to 1 nm, the V_FB rolling-off caused by the 10 cycles (∼5 Å) and 20 cycles (∼10 Å) ALD LaO_x capping layers are high, up to ∼282-mV and 550-mV, respectively. The significant V_FB rolling-off behaviours were investigated by the measurements of gate C/V, gate I/V and V_FB vs. EOT. The phenomena were modelled and explained comprehensively with a schematic diagram.

Online publication date: Fri, 06-Feb-2015

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