Effect of Al doping on electrical properties of Si nanowire
by Sana Kausar; Shirish Joshi; Anurag Srivastava
International Journal of Nanoparticles (IJNP), Vol. 7, No. 2, 2014

Abstract: In this paper we present a theoretical study of the electron transport properties of Si nanowire and also the electron transport properties of nanowire doped with Al atoms by using Atomistix toolkit (ATK). The differences in the I-V curves obtained with each configuration and their technologic consequences are discussed in detail. ATK is a package which provides efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. The simulation results were obtained using local density approximation based on density functional theory (DFT).

Online publication date: Tue, 30-Sep-2014

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