The design of a novel delay cell based 8.3 GHz, low phase noise ring oscillator in C-MOS 180 nm technology for biomedical ultra-wide-band integrated applications Online publication date: Sat, 27-Sep-2014
by Ashish Raman; Rakesh Kumar Sarin
International Journal of Biomedical Engineering and Technology (IJBET), Vol. 13, No. 1, 2013
Abstract: This paper presents the designing of a novel wide frequency range, low phase noise, 3-delay stages based ring oscillator for Ultra-Wide-Band (UWB) biomedical application. The phase noise is reduced by using both PMOS and NMOS latch together. The high frequency is achieved, reducing the switching time of the delay cell, varying the resistance through control voltage (VCONTROL), controlling the strength of the NMOS latch through tuning voltage (VTUNE) and by connecting the gates of the secondary input transistor with same input of the delay cell. This oscillator is implemented using 180 nm CMOS process provided by TSMC. The designed oscillator is measured to cover a frequency range of 5.9-8.3 GHz@1.8-V power supply and manifests a phase noise of −167dBc/Hz @1MHz and −175 dBc/Hz @10 MHz offset from a centre frequency of 5.9 GHz and occupies an area of 194 μm × 147 μm with the power dissipation of 14.684 dbm.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Biomedical Engineering and Technology (IJBET):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook