Homogeneity of Ge_1-xSi_x alloys (x≤0.30) grown by the travelling solvent method
by D. Labrie, A.E. George, M. Jamieson, S. Obruchkov, J.P. Healey, B.E. Paton, M.Z. Saghir
International Journal of Materials and Product Technology (IJMPT), Vol. 22, No. 1/2/3, 2005

Abstract: Crystal growth of Ge_1-xSi_x alloy with [Si] composition ranging from 1 to 30 at.%. using the travelling solvent method (TSM) is presented. Single crystal growth was obtained using a Ge seed crystal. The fluctuations in chemical composition along and transverse to the Ge1-xSix samples were typically less than ±0.4 and 0.3 at.%, respectively. The macroscopic composition inhomogeneities along the growth axis in the TSM grown samples correlate strongly with those within the Ge_1-xSi_x feedrods which in turn depend markedly on the quenching rate of the molten alloy. Hall effect measurements indicate that there is a conductivity type reversal in the samples from n to p type with Si composition above 1 at.% in the alloy.

Online publication date: Tue, 30-Nov-2004

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