Band gap of silicon nanowires along [111] direction doped with Al atoms
by Sana Kausar; Shirish Joshi
International Journal of Nanoparticles (IJNP), Vol. 6, No. 4, 2013

Abstract: In this work electronics property of hydrogen-passivated, free-standing silicon nanowire, oriented along [111] direction with triangular cross section was studied. Further the effect of doping of aluminium atoms on band structure is also analysed by DFT using GGA approximation. It is observed that the electronic properties of a semiconducting H-SiNW are dramatically altered upon adsorption.

Online publication date: Mon, 31-Mar-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com