Physical modelling of carbon nanotube field effect transistor
by Rebiha Marki; Chérifa Azizi
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013

Abstract: This work presents a model for the Schottky barrier (SB) carbon nanotube field effect transistor (CNTFET), where the source and the drain electrodes contacts are characterised following a model showing the formation of SBs at the metal electrode-nanotube interface and having a direct influence on the CNTFET transport properties. We have studied the influence of the material parameters, such as the height of the SB (Φ_SB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity on the static electrical performances of the transistor, particularly to determine the intrinsic properties of the nanodevice. Moreover, a compact model-simulation results based on the (I-V) characteristics was given.

Online publication date: Mon, 31-Mar-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com