An EBIC model to describe two close grain boundaries in semiconductors
by Abderrezak Lahreche; Yamina Beggah; Djamel Eddine Mekki
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013

Abstract: An EBIC model to describe two interacting grain boundaries (GBs) for semiconductor nanostructures is proposed. The effect of surface recombination velocities of the GBs, the distance between the GBs and the diffusion length of the semiconductor on the shape of the computed EBIC current are shown. The effect of the generation volume extension on the shape and also on the resolution of the computed EBIC current is studied.

Online publication date: Mon, 31-Mar-2014

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