Characteristics of Al-doped TiO2 thin films grown by pulsed laser deposition Online publication date: Mon, 31-Mar-2014
by Faouzi Hanini; Yacine Bouachiba; Fouad Kermiche; Adel Taabouche; Abderrahmane Bouabellou; Tahar Kerdja; Kamel Boukheddaden
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013
Abstract: Al-doped TiO2 (TiO2:Al) thin films were deposited at 450°C onto glass substrates using pulsed laser deposition method. X-rays diffraction spectra showed that the obtained films are polycrystalline of anatase structure with preferential orientation of (101) direction. AFM images, nanoparticles size and surface roughness mean square values showed that the surfaces of TiO2:Al films are smoother than that of undoped TiO2 films. A blue shift in the absorption edge of TiO2 with increasing Al concentration in the film is noteworthy as it leads to increase in the width of the optical transmission. The optical waveguiding performances of the TiO2:Al films were demonstrated by using the m-lines spectroscopy technique and the results were correlated to the structural properties. Spectroscopic ellipsometry was used to extract the optical constants of the films. The determined band gap of undoped and Al doped films varies from 3.43 to 3.61 eV, which is in accordance to Burstein-Moss shift.
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