Annealing effect on photoluminescence properties of SiO₂/SiN_x coating
by S. Meziani; A. Moussi; L. Mahiou; R. Outemzabet
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013

Abstract: Hydrogenated amorphous silicon nitride (SiN_x:H) films were deposited using plasma-enhanced chemical vapour deposition (PECVD) and subsequently, silicon oxide (SiO₂) were grown by dry thermal oxidation at 950°C for 60 min or by dip-coating (sol gel 's-g') operations. Thermal annealing processes were performed at 500 to 1,000°C during 30 min in an N₂ atmosphere to study the effect of annealing temperature on light-emitting and charge storage properties. It is found that the photoluminescence spectra are also changed after annealing treatments and the possible originations are discussed.

Online publication date: Mon, 31-Mar-2014

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