Properties of Al-doped ZnO thin films grown by pulsed laser deposition on Si(100) substrates
by Fouad Kermiche; Adel Taabouche; Faouzi Hanini; Sarah Menakh; Abderrahmane Bouabellou; Yacine Bouachiba; Tahar Kerdja; Chawki Benazzouz; Mohamed Bouafia; Saad Amara
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013

Abstract: Undoped and Al-doped ZnO (AZO) polycrystalline thin films (Al: 3, 5 at.%) have been deposited at 450°C onto Si(100) substrates by pulsed laser deposition method. A KrF excimer (248 nm, 25 ns, 2 J/cm²) was used as laser source. The study of the obtained undoped and Al-doped ZnO thin films has been accomplished using X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) techniques. The ZnO and AZO thin films deposited have been crystallised in hexagonal wurtzite-type structure with a strong (00.2) orientation. The grain sizes calculated from XRD patterns decrease from 38 to 26 nm with increasing Al doping. All nanoparticle thin films have a good surface morphology.

Online publication date: Mon, 31-Mar-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?


Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com