Scanning laser induced current measurements on silicon wafer with through silicon via structure
by Shin-ichi Takasu; Ryouta Zaizen; Woon Choi; Hajime Tomokage; Haruki Sueyoshi
International Journal of Nanoparticles (IJNP), Vol. 6, No. 2/3, 2013

Abstract: The scanning laser beam induced current is measured on a silicon wafer with through silicon via (TSV) structure. The current image is obtained by changing the focused point of the infrared laser from the surface to the inside of silicon. The current contrast due to the defect of the insulating layer is obtained, and the defect point in the via hole is estimated from the brightness of the image versus distance from the surface.

Online publication date: Mon, 31-Mar-2014

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