Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction Online publication date: Sat, 27-Apr-2013
by Pierre Blanc; Martin Heiss; Carlo Colombo; Anna Dalmau Mallorquì; Tina Saberi Safaei; Peter Krogstrup; Jesper Nygård; Anna Fontcuberta i Morral
International Journal of Nanotechnology (IJNT), Vol. 10, No. 5/6/7, 2013
Abstract: Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.
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