Effect of AgNO₃ concentration on structure of aligned silicon nanowire arrays fabricated via silver-assisted chemical etching
by Dao Tran Cao; Luong Truc Quynh Ngan; Tran Van Viet; Cao Tuan Anh
International Journal of Nanotechnology (IJNT), Vol. 10, No. 3/4, 2013

Abstract: In this paper we present a systematic study of the effect of AgNO₃ concentration in HF/AgNO₃ aqueous solution on the structure and properties of the aligned silicon nanowire (SiNW) arrays. The results showed that morphology and properties of aligned SiNW arrays depend strongly on AgNO₃ concentration. The size of Si nanowires is uniform over large area with the diameter in the region of 100-160 nm and the length in the region of 5-12 µm. When the AgNO₃ concentration is large enough, the reflection coefficient of SiNW arrays is less than 2%.

Online publication date: Fri, 05-Apr-2013

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