Analysing I_ON/I_OFF in ultradeep-submicron CMOS devices using grooved nMOSFETs for low-power applications
by Subhra Dhar; Manisha Pattanaik; P. Rajaram
International Journal of Signal and Imaging Systems Engineering (IJSISE), Vol. 6, No. 1, 2013

Abstract: To manage the increasing static leakage in ultra low-power applications, solutions for leakage reduction as well as improving the current drive of the device are sought at the device design and process technology levels. The influence of single corner grooves and changing concave corner angles in deep submicron and ultra deep-submicron grooved gate nMOSFET is studied to analyse the subthreshold characteristics in ultralow-power applications. ATLAS process simulator verifies that by changing the structural parameters, ON current-OFF current ratio is improved and maintained constant and be helpful for low-power applications as well as be applicable to high-speed devices.

Online publication date: Sun, 20-Jan-2013

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