Thickness dependent trap states and mobility in 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole
by K. Arunesh
International Journal of Materials Engineering Innovation (IJMATEI), Vol. 3, No. 2, 2012

Abstract: Electron transport in 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole is investigated as a function of temperature and organic layer thickness. Conduction mechanism has been found to be affected by trap states. The current density-voltage characteristics have been found to follow the trap charge limited conduction model. The density of trap states and trap energy has been found to be dependent on sample thickness. As the thickness has increased from 100 nm to 150 nm, trap energy has correspondingly increased from 80 meV to 135 meV and density of trap states has been found to decrease from 1.6 × 1018 to 3.5 × 1017 per cm³. Mobility has been found to be increasing with the decrease in thickness.

Online publication date: Sat, 23-Aug-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials Engineering Innovation (IJMATEI):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?


Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com