Investigation of thermal resistance for the graphene-Si interface by molecular dynamics Online publication date: Thu, 18-Sep-2014
by Xingang Yu; Liqiang Zhang; Xifu Song; Tao Xi; Yanfang Zhao; Jian Liu; Xiuwen Yang; Min Chen; Ping Yang
International Journal of Materials and Structural Integrity (IJMSI), Vol. 6, No. 1, 2012
Abstract: The thermal resistance of the graphene-Si interface is systematically investigated based on the micro-canonical ensemble (NVE) by using three kinds of interaction potentials. When the system reaches the steady state, the heat flux is applied to the model. The results show that the thermal resistance of the graphene-Si interface is weakened because of the defect in graphene. Defect in graphene leads to a sharp decline of the interfacial thermal resistance. However, the interfacial thermal resistance declines gradually with the defect area increase. When the defect area is increased to 19.7% of the total area, the interfacial thermal resistance tends to be stable.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials and Structural Integrity (IJMSI):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com