Hydrogen and hydrogen sulfide thermal effusion from a-Si,S:H alloy
by Safwan R. Arekat
International Journal of Nanoparticles (IJNP), Vol. 3, No. 4, 2010

Abstract: Thermal gas effusion measurements were carried out in an ultrahigh vacuum system equipped with a quadrupole mass analyser. The hydrogen and hydrogen sulphide thermal effusion rates from amorphous hydrogenated silicon-sulphur films grown by a CVD glow discharge technique were measured. The hydrogen effusion rates show up to three peaks at different temperatures, the low-T peak corresponds to H₂ escape from void structures, the mid-T peak originates from polysilane-like structures, whereas the high-T peak results from breaking bulk Si-H bonds. For low sulphur content films, a sharp effusion peak of H₂S is observed at around 840°C, which is indicative of the onset of crystallisation of the material. This peak broadens and shifts to low temperatures at higher sulphur concentrations. A kinetic model is employed to estimate the activation energies and bond strengths from the thermal gas effusion data.

Online publication date: Fri, 26-Nov-2010

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