A rapid thermal processing system for the deposition of silicon carbide layers on silicon
by John H. Montgomery, Fred H. Ruddell, David W. McNeill, B. Mervyn Armstrong, Harold S. Gamble
International Journal of Materials and Product Technology (IJMPT), Vol. 11, No. 1/2, 1996

Abstract: This paper describes the construction of a novel rapid thermal chemical vapour deposition reactor which has been designed to minimise the thermal budget in the deposition of silicon carbide on silicon. The reactor utilises tungsten halogen lamps to heat the single process wafer to temperature sup to 1080°C in a few seconds in a turbomolecular-pumped quartz reactor tube. Epitaxially aligned silicon was initially deposited in the system at temperatures down to 590°C using silane gas. Conditions for the minimisation of oxygen contamination in the growing films are established. Using propanelsilane gas chemistry, stoichiometric silicon carbide layers have been achieved at a process temperature of 970°C. Deposition rates of typically 0.3µ/min ensure the process wafer is exposed to high temperatures for less than 60 seconds. Initial layers were polycrystalline in structure. Layers have been in-situ doped using phosphine gas, yielding concentrations up to 8 x 10²⁰ cm³. Test transistors produced with the silicon carbide layer incorporated as a wide band-gap emitter demonstrated the heteroemitter effect.

Online publication date: Tue, 02-Nov-2010

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