Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
by M.F. Cerqueira, T.V. Semikina, N.V. Baidus, E. Alves
International Journal of Materials and Product Technology (IJMPT), Vol. 39, No. 1/2, 2010

Abstract: The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure (i.e., Nanocrystal (NC) size and volume fraction) of the films were studied by Rutherford Backscattering Spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure.

Online publication date: Sat, 31-Jul-2010

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